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Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215

Номер на артикул на RS: 134-295Марка: Nexperia№ по каталога на производителя: PMV65XP,215
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

€ 15,90

€ 0,318 Each (In a Pack of 50) (ex VAT)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Изберете тип опаковка

€ 15,90

€ 0,318 Each (In a Pack of 50) (ex VAT)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
50 - 550€ 0,318€ 15,90
600 - 1450€ 0,171€ 8,56
1500+€ 0,144€ 7,22

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more