Nexperia N-Channel MOSFET, 870 mA, 30 V, 3-Pin SOT-323 PMF370XN,115

Номер на артикул на RS: 725-8382Марка: Nexperia№ по каталога на производителя: PMF370XN,115
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

870 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

560 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.65 nC @ 4.5 V

Width

1.35mm

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

Детайли за продукта

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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N-Channel MOSFET Transistor, 850 mA, 30 V, 3-Pin SC-70 Vishay SI1304BDL-T1-E3
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Запитване за цена

Each (In a Pack of 20) (ex VAT)

Nexperia N-Channel MOSFET, 870 mA, 30 V, 3-Pin SOT-323 PMF370XN,115
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Запитване за цена

Each (In a Pack of 20) (ex VAT)

Nexperia N-Channel MOSFET, 870 mA, 30 V, 3-Pin SOT-323 PMF370XN,115

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Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET Transistor, 850 mA, 30 V, 3-Pin SC-70 Vishay SI1304BDL-T1-E3
Запитване за ценаEach (In a Pack of 20) (ex VAT)

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

870 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

560 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

0.65 nC @ 4.5 V

Width

1.35mm

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

Детайли за продукта

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET Transistor, 850 mA, 30 V, 3-Pin SC-70 Vishay SI1304BDL-T1-E3
Запитване за ценаEach (In a Pack of 20) (ex VAT)