Технически документи
Спецификации
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-89
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.6 x 2.6 x 1.6mm
Страна на произход
Hong Kong
Детайли за продукта
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 9,20
€ 0,368 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 9,20
€ 0,368 Each (In a Pack of 25) (ex VAT)
Стандарт
25
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
25 - 225 | € 0,368 | € 9,20 |
250 - 600 | € 0,196 | € 4,91 |
625 - 2475 | € 0,187 | € 4,68 |
2500+ | € 0,158 | € 3,94 |
Технически документи
Спецификации
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
SOT-89
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
150
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.6 x 2.6 x 1.6mm
Страна на произход
Hong Kong
Детайли за продукта
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.