Nexperia PBSS4330X,115 NPN Transistor, 3 A, 30 V, 4-Pin UPAK
Технически документи
Спецификации
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
30 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
1.6 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.6 x 4.6 x 2.6mm
Страна на произход
China
Детайли за продукта
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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Запитване за цена
Each (In a Pack of 10) (ex VAT)
Стандарт
10
Запитване за цена
Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
30 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
1.6 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.6 x 4.6 x 2.6mm
Страна на произход
China
Детайли за продукта
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products