Технически документи
Спецификации
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2.4 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
1.1 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Страна на произход
China
Детайли за продукта
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 57,11
€ 0,381 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
150
€ 57,11
€ 0,381 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
150
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 150 - 270 | € 0,381 | € 11,42 |
| 300 - 720 | € 0,357 | € 10,71 |
| 750 - 1470 | € 0,328 | € 9,85 |
| 1500+ | € 0,301 | € 9,04 |
Технически документи
Спецификации
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2.4 A
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
1.1 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
-30 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1.1mm
Страна на произход
China
Детайли за продукта
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


