Технически документи
Спецификации
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008CBKS
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.4 Ω, 4.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Детайли за продукта
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 222,65
€ 0,074 Each (On a Reel of 3000) (ex VAT)
3000
€ 222,65
€ 0,074 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008CBKS
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.4 Ω, 4.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Детайли за продукта


