Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,109
Each (On a Reel of 3000) (ex VAT)
3000
€ 0,109
Each (On a Reel of 3000) (ex VAT)
3000
Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта