P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 Nexperia NX2301P,215

Номер на артикул на RS: 124-2336Марка: Nexperia№ по каталога на производителя: NX2301P,215
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,109

Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 Nexperia NX2301P,215

€ 0,109

Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 Nexperia NX2301P,215
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more