Технически документи
Спецификации
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Детайли за продукта
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,271
Each (Supplied on a Reel) (ex VAT)
50
€ 0,271
Each (Supplied on a Reel) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
50 - 100 | € 0,271 | € 13,57 |
150 - 250 | € 0,165 | € 8,24 |
300 - 550 | € 0,16 | € 8,01 |
600 - 1150 | € 0,157 | € 7,84 |
1200+ | € 0,153 | € 7,66 |
Технически документи
Спецификации
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
170 mA, 330 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3.6 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Детайли за продукта