P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215

Номер на артикул на RS: 436-8091Марка: Nexperia№ по каталога на производителя: BSS84,215
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Страна на произход

China

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P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

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€ 0,349

Each (In a Pack of 10) (ex VAT)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
Изберете тип опаковка

€ 0,349

Each (In a Pack of 10) (ex VAT)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 40€ 0,349€ 3,48
50 - 90€ 0,333€ 3,33
100 - 240€ 0,278€ 2,78
250 - 490€ 0,261€ 2,61
500+€ 0,243€ 2,43

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Height

1mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more