Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,349
Each (In a Pack of 10) (ex VAT)
10
€ 0,349
Each (In a Pack of 10) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 40 | € 0,349 | € 3,48 |
50 - 90 | € 0,333 | € 3,33 |
100 - 240 | € 0,278 | € 2,78 |
250 - 490 | € 0,261 | € 2,61 |
500+ | € 0,243 | € 2,43 |
Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Страна на произход
China
Детайли за продукта