Nexperia Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 BSS138PS,115

Номер на артикул на RS: 792-0901PМарка: Nexperia№ по каталога на производителя: BSS138PS,115
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 89,06

€ 0,223 Each (Supplied on a Reel) (ex VAT)

Nexperia Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 BSS138PS,115
Изберете тип опаковка

€ 89,06

€ 0,223 Each (Supplied on a Reel) (ex VAT)

Nexperia Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 BSS138PS,115

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
400 - 760€ 0,223€ 8,91
800+€ 0,198€ 7,90

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more