N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138AKAR

Номер на артикул на RS: 136-4825Марка: Nexperia№ по каталога на производителя: BSS138AKAR
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Series

BSS138AKA

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.06 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Детайли за продукта

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 0,14

Each (In a Pack of 100) (ex VAT)

N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138AKAR
Изберете тип опаковка

€ 0,14

Each (In a Pack of 100) (ex VAT)

N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138AKAR
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
100 - 400€ 0,14€ 14,03
500 - 900€ 0,129€ 12,86
1000 - 2400€ 0,12€ 12,05
2500 - 4900€ 0,111€ 11,11
5000+€ 0,102€ 10,18

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Series

BSS138AKA

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.06 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Детайли за продукта

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more