N-Channel MOSFET, 150 mA, 100 V, 3-Pin SOT-23 Nexperia BSS123,215

Номер на артикул на RS: 792-0885PМарка: Nexperia№ по каталога на производителя: BSS123,215
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3mm

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

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€ 0,131

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 150 mA, 100 V, 3-Pin SOT-23 Nexperia BSS123,215
Изберете тип опаковка

€ 0,131

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 150 mA, 100 V, 3-Pin SOT-23 Nexperia BSS123,215
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
100 - 100€ 0,131€ 13,10
200 - 400€ 0,101€ 10,06
500 - 900€ 0,078€ 7,84
1000 - 1900€ 0,075€ 7,48
2000+€ 0,07€ 7,02

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3mm

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more