Nexperia P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-223 BSP250,115

Номер на артикул на RS: 216-9268PМарка: Nexperia№ по каталога на производителя: BSP250,115
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

3.7mm

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Minimum Operating Temperature

-65 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Запитване за цена

Each (Supplied on a Reel) (ex VAT)

Nexperia P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-223 BSP250,115
Изберете тип опаковка

Запитване за цена

Each (Supplied on a Reel) (ex VAT)

Nexperia P-Channel MOSFET, 3 A, 30 V, 3-Pin SOT-223 BSP250,115

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

3.7mm

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Minimum Operating Temperature

-65 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more