Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.7mm
Minimum Operating Temperature
-65 °C
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
5
Запитване за цена
Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.7mm
Minimum Operating Temperature
-65 °C
Страна на произход
China
Детайли за продукта


