Nexperia P-Channel MOSFET, 225 mA, 250 V, 3-Pin SOT-223 BSP225,115

Номер на артикул на RS: 177-7183PМарка: Nexperia№ по каталога на производителя: BSP225,115
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

225 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Width

3.7mm

Height

1.7mm

Minimum Operating Temperature

-65 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 4,55

€ 0,455 Each (Supplied on a Reel) (ex VAT)

Nexperia P-Channel MOSFET, 225 mA, 250 V, 3-Pin SOT-223 BSP225,115
Изберете тип опаковка

€ 4,55

€ 0,455 Each (Supplied on a Reel) (ex VAT)

Nexperia P-Channel MOSFET, 225 mA, 250 V, 3-Pin SOT-223 BSP225,115

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
10 - 20€ 0,455€ 2,27
25 - 45€ 0,425€ 2,12
50 - 95€ 0,396€ 1,98
100+€ 0,307€ 1,53

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

225 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

15 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Width

3.7mm

Height

1.7mm

Minimum Operating Temperature

-65 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more