P-Channel MOSFET, 225 mA, 200 V, 3-Pin SOT-223 Nexperia BSP220,115

Номер на артикул на RS: 725-8379Марка: Nexperia№ по каталога на производителя: BSP220,115
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

225 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Height

1.7mm

Страна на произход

China

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P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Запитване за цена

Each (In a Pack of 10) (ex VAT)

P-Channel MOSFET, 225 mA, 200 V, 3-Pin SOT-223 Nexperia BSP220,115
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 10) (ex VAT)

P-Channel MOSFET, 225 mA, 200 V, 3-Pin SOT-223 Nexperia BSP220,115

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

225 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Height

1.7mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more