Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

Номер на артикул на RS: 725-8366PМарка: Nexperia№ по каталога на производителя: BSH203,215
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 6,50

€ 0,163 Each (Supplied on a Reel) (ex VAT)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215
Изберете тип опаковка

€ 6,50

€ 0,163 Each (Supplied on a Reel) (ex VAT)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
40 - 80€ 0,163€ 3,25
100+€ 0,144€ 2,89

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more