N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

Номер на артикул на RS: 508-539Марка: Nexperia№ по каталога на производителя: BSH114,215
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.6 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Length

3mm

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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Запитване за цена

Each (In a Pack of 20) (ex VAT)

N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

Запитване за цена

Each (In a Pack of 20) (ex VAT)

N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

4.6 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Length

3mm

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more