Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215

Номер на артикул на RS: 509-324Марка: Nexperia№ по каталога на производителя: BSH108,215
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Width

1.4mm

Height

1mm

Minimum Operating Temperature

-65 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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€ 5,59

€ 0,28 Each (In a Pack of 20) (ex VAT)

Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215

€ 5,59

€ 0,28 Each (In a Pack of 20) (ex VAT)

Nexperia N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 BSH108,215

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
20 - 140€ 0,28€ 5,59
160 - 740€ 0,167€ 3,34
760 - 1480€ 0,16€ 3,20
1500+€ 0,127€ 2,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

6.4 nC @ 10 V

Width

1.4mm

Height

1mm

Minimum Operating Temperature

-65 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more