Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,329
Each (Supplied on a Reel) (ex VAT)
50
€ 0,329
Each (Supplied on a Reel) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
50 - 50 | € 0,329 | € 16,46 |
100 - 200 | € 0,141 | € 7,06 |
250 - 450 | € 0,134 | € 6,71 |
500 - 950 | € 0,127 | € 6,36 |
1000+ | € 0,11 | € 5,49 |
Технически документи
Спецификации
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта