N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia 2N7002PS,115

Номер на артикул на RS: 781-6708PМарка: Nexperia№ по каталога на производителя: 2N7002PS,115
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

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N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 0,329

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia 2N7002PS,115
Изберете тип опаковка

€ 0,329

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia 2N7002PS,115
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
50 - 50€ 0,329€ 16,46
100 - 200€ 0,141€ 7,06
250 - 450€ 0,134€ 6,71
500 - 950€ 0,127€ 6,36
1000+€ 0,11€ 5,49

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

Детайли за продукта

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more