N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G

Номер на артикул на RS: 177-9742Марка: Microchip№ по каталога на производителя: TN0110N3-G
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

100 V

Series

TN0110

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4.06mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

5.33mm

Страна на произход

Taiwan, Province Of China

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€ 1,181

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G
Изберете тип опаковка

€ 1,181

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 Microchip TN0110N3-G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 20€ 1,181€ 11,81
30 - 90€ 1,123€ 11,23
100+€ 1,019€ 10,19

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

100 V

Series

TN0110

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4.06mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

5.33mm

Страна на произход

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more