N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G

Номер на артикул на RS: 178-5359Марка: Microchip№ по каталога на производителя: DN3765K4-G
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.2mm

Width

6.73mm

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip

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N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G

P.O.A.

N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.2mm

Width

6.73mm

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

MOSFET Transistors, Microchip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more