N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220F MagnaChip MMF65R190PTH
Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
53 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Детайли за продукта
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
53 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Детайли за продукта
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
Low EMI
Low power loss through high speed switching and low on-resistance
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products