MagnaChip N-Channel MOSFET, 17 A, 30 V, 8-Pin SOIC MDS1525URH

Номер на артикул на RS: 871-4987PМарка: MagnaChip№ по каталога на производителя: MDS1525URH
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

5.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Страна на произход

China

Детайли за продукта

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

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Запитване за цена

Each (Supplied on a Reel) (ex VAT)

MagnaChip N-Channel MOSFET, 17 A, 30 V, 8-Pin SOIC MDS1525URH
Изберете тип опаковка

Запитване за цена

Each (Supplied on a Reel) (ex VAT)

MagnaChip N-Channel MOSFET, 17 A, 30 V, 8-Pin SOIC MDS1525URH

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

5.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Страна на произход

China

Детайли за продукта

Low Voltage (LV) MOSFET

These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more