N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH

Номер на артикул на RS: 871-4956Марка: MagnaChip№ по каталога на производителя: MDP18N50BTH
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

236 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH

P.O.A.

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

236 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more