N-Channel MOSFET, 12.8 A, 100 V, 3-Pin DPAK MagnaChip MDD1903RH
Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
36.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.39mm
Страна на произход
China
Детайли за продукта
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
25
P.O.A.
25
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
36.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.39mm
Страна на произход
China
Детайли за продукта
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products