IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
590 nC @ 10 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.7mm
Страна на произход
Germany
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 521,75
€ 26,087 Each (In a Tube of 20) (ex VAT)
20
€ 521,75
€ 26,087 Each (In a Tube of 20) (ex VAT)
Информацията за складовите наличности временно не е налична.
20
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
590 nC @ 10 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.7mm
Страна на произход
Germany
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products