IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

Номер на артикул на RS: 193-874Марка: IXYS№ по каталога на производителя: MII100-12A3
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Преглед на всички в IGBTs

Технически документи

Спецификации

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Детайли за продукта

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 69,03

Всеки (ex VAT)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

1

Предлагат се на бройка по 1
1€ 69,03
2€ 138,07
3€ 207,10
4€ 276,14
5€ 345,17
6€ 414,21
7€ 483,24
8€ 552,27
9€ 621,31
10€ 690,34
11€ 759,38
12€ 828,41
13€ 897,45
14€ 966,48
15€ 1 035,51

€ 69,03

Всеки (ex VAT)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount
Информацията за складовите наличности временно не е налична.

1

Предлагат се на бройка по 1
1€ 69,03
2€ 138,07
3€ 207,10
4€ 276,14
5€ 345,17
6€ 414,21
7€ 483,24
8€ 552,27
9€ 621,31
10€ 690,34
11€ 759,38
12€ 828,41
13€ 897,45
14€ 966,48
15€ 1 035,51

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Детайли за продукта

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more