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IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXFN102N30P

Номер на артикул на RS: 193-464Марка: IXYS№ по каталога на производителя: IXFN102N30PDistrelec Article No.: 30253358
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Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

224 nC @ 10 V

Width

25.42mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.23mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Детайли за продукта

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Информацията за складовите наличности временно не е налична.

€ 26,00

€ 26,00 Всеки (ex VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXFN102N30P
Изберете тип опаковка

€ 26,00

€ 26,00 Всеки (ex VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXFN102N30P
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична цена
1 - 1€ 26,00
2 - 4€ 24,71
5+€ 23,41

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

224 nC @ 10 V

Width

25.42mm

Transistor Material

Si

Number of Elements per Chip

1

Length

38.23mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Детайли за продукта

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more