IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Q-Class
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
170 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 690,90
€ 27,636 Each (In a Tube of 25) (ex VAT)
25
€ 690,90
€ 27,636 Each (In a Tube of 25) (ex VAT)
25
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Q-Class
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
170 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products