N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXYS IXFH34N65X2

Номер на артикул на RS: 146-1788Марка: IXYS№ по каталога на производителя: IXFH34N65X2
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Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

650 V

Series

HiperFET, X2-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

540 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

56 nC @ 10 V

Width

21.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.24mm

Height

5.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Страна на произход

United States

Детайли за продукта

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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€ 7,209

Each (In a Tube of 30) (ex VAT)

N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXYS IXFH34N65X2

€ 7,209

Each (In a Tube of 30) (ex VAT)

N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXYS IXFH34N65X2
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

650 V

Series

HiperFET, X2-Class

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

540 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

56 nC @ 10 V

Width

21.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.24mm

Height

5.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Страна на произход

United States

Детайли за продукта

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series

The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more