IXYS HiperFET, Polar N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
43 nC @ 10 V
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
21.46mm
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 5,88
€ 5,88 Всеки (ex VAT)
Стандарт
1
€ 5,88
€ 5,88 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена |
|---|---|
| 1 - 4 | € 5,88 |
| 5 - 9 | € 5,53 |
| 10 - 14 | € 5,28 |
| 15 - 19 | € 4,89 |
| 20+ | € 4,65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
43 nC @ 10 V
Width
5.3mm
Minimum Operating Temperature
-55 °C
Height
21.46mm
Детайли за продукта
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products