N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X

Номер на артикул на RS: 146-4242Марка: IXYS№ по каталога на производителя: IXFA4N85X
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

850 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

7 @ 10 V nC

Width

10.92mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Height

4.7mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X

50

Предлагат се на бройка по 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X
Информацията за складовите наличности временно не е налична.

50

Предлагат се на бройка по 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

850 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

7 @ 10 V nC

Width

10.92mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.41mm

Height

4.7mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more