N-Channel MOSFET Transistor, 240 A, 338 A, 60 V, 7-Pin D2PAK International Rectifier IRFS7530TRL7PP
Технически документи
Спецификации
Channel Type
N
Maximum Continuous Drain Current
240 A, 338 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
236 nC @ 10 V
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
11.33mm
Страна на произход
Mexico
Детайли за продукта
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
2
P.O.A.
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Channel Type
N
Maximum Continuous Drain Current
240 A, 338 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
236 nC @ 10 V
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
11.33mm
Страна на произход
Mexico
Детайли за продукта
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products