N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1

Номер на артикул на RS: 171-1920Марка: Infineon№ по каталога на производителя: SPA20N60C3XKSA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

20.7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Series

SPA20N60C3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

34.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

4.85mm

Number of Elements per Chip

1

Forward Diode Voltage

0

Typical Power Gain

0

Height

16.15mm

Minimum Operating Temperature

-55 °C

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 4,976

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1

€ 4,976

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
2 - 8€ 4,976€ 9,95
10 - 18€ 4,725€ 9,45
20 - 48€ 4,257€ 8,51
50 - 98€ 3,83€ 7,66
100+€ 3,637€ 7,27

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

20.7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Series

SPA20N60C3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

34.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

4.85mm

Number of Elements per Chip

1

Forward Diode Voltage

0

Typical Power Gain

0

Height

16.15mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more