Вземете 7 % отстъпка за всички онлайн поръчки след регистрация с RS.

регистрирайте се сега

Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF

Номер на артикул на RS: 171-1913PМарка: Infineon№ по каталога на производителя: SI4435DYTRPBF
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

Si4435DYPbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Typical Power Gain

0

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Информацията за складовите наличности временно не е налична.

€ 1,96

€ 0,196 Each (Supplied on a Reel) (ex VAT)

Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
Изберете тип опаковка

€ 1,96

€ 0,196 Each (Supplied on a Reel) (ex VAT)

Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

Si4435DYPbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Typical Power Gain

0

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more