Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
11.3mm
Length
10.67mm
Typical Gate Charge @ Vgs
25 nC @ 5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Детайли за продукта
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 14,05
€ 0,702 Each (In a Pack of 20) (ex VAT)
Стандарт
20
€ 14,05
€ 0,702 Each (In a Pack of 20) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
20
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 20 - 80 | € 0,702 | € 14,05 |
| 100 - 180 | € 0,667 | € 13,34 |
| 200 - 480 | € 0,64 | € 12,80 |
| 500 - 980 | € 0,611 | € 12,23 |
| 1000+ | € 0,568 | € 11,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
11.3mm
Length
10.67mm
Typical Gate Charge @ Vgs
25 nC @ 5 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Детайли за продукта
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products