N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF

Номер на артикул на RS: 178-5089Марка: Infineon№ по каталога на производителя: IRLR3410TRPBF
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

2.39mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 0,405

Each (On a Reel of 2000) (ex VAT)

N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF

€ 0,405

Each (On a Reel of 2000) (ex VAT)

N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
2000 - 2000€ 0,405€ 810,24
4000+€ 0,385€ 770,55

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

2.39mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more