N-Channel MOSFET, 298 A, 60 V, 3-Pin I2PAK Infineon IRL60SL216
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
298 A
Maximum Drain Source Voltage
60 V
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
170 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
11.3mm
Series
StrongIRFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта
StrongIRFET™ Logic-Level Power MOSFET, Infineon
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.
Optimal RDS(on) @ VGS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
2
P.O.A.
2
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Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
298 A
Maximum Drain Source Voltage
60 V
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
170 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Height
11.3mm
Series
StrongIRFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта
StrongIRFET™ Logic-Level Power MOSFET, Infineon
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.
Optimal RDS(on) @ VGS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products