Infineon N-Channel MOSFET, 53 A, 55 V, 3-Pin TO-220AB IRFZ46NPBF
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Детайли за продукта
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,86
€ 0,86 Всеки (ex VAT)
Стандарт
1
€ 0,86
€ 0,86 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена |
|---|---|
| 1 - 24 | € 0,86 |
| 25 - 49 | € 0,78 |
| 50 - 99 | € 0,73 |
| 100 - 249 | € 0,67 |
| 250+ | € 0,62 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Детайли за продукта
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products