N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBF

Номер на артикул на RS: 784-8950Марка: Infineon№ по каталога на производителя: IRFR4510PBF
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.39mm

Series

HEXFET

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Запитване за цена

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBF
Изберете тип опаковка

Запитване за цена

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

6.22mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.39mm

Series

HEXFET

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от