Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
143 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.39mm
Series
HEXFET
Запитване за цена
Each (In a Pack of 5) (ex VAT)
Стандарт
5
Запитване за цена
Each (In a Pack of 5) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
143 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.39mm
Series
HEXFET


