Infineon HEXFET N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
161 nC @ 10 V
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Детайли за продукта
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 7,44
€ 7,44 Всеки (ex VAT)
Стандарт
1
€ 7,44
€ 7,44 Всеки (ex VAT)
Стандарт
1
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Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
161 nC @ 10 V
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Детайли за продукта
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products