N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC Infineon IRFP2907ZPBF

Номер на артикул на RS: 688-6976Марка: Infineon№ по каталога на производителя: IRFP2907ZPBF
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.9mm

Width

5.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.3mm

Детайли за продукта

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 5,277

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC Infineon IRFP2907ZPBF
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

2

Предлагат се на бройка по 2
2€ 10,55
4€ 21,11
6€ 31,66
8€ 42,22
10€ 52,77
12€ 63,33
14€ 73,88
16€ 84,43
18€ 94,99
20€ 88,61
22€ 97,47
24€ 106,34
26€ 115,20
28€ 124,06
30€ 132,92

€ 5,277

Each (In a Pack of 2) (ex VAT)

N-Channel MOSFET, 170 A, 80 V, 3-Pin TO-247AC Infineon IRFP2907ZPBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

2

Предлагат се на бройка по 2
2€ 10,55
4€ 21,11
6€ 31,66
8€ 42,22
10€ 52,77
12€ 63,33
14€ 73,88
16€ 84,43
18€ 94,99
20€ 88,61
22€ 97,47
24€ 106,34
26€ 115,20
28€ 124,06
30€ 132,92

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
2 - 18€ 5,277€ 10,55
20 - 48€ 4,431€ 8,86
50 - 98€ 4,168€ 8,34
100 - 198€ 3,853€ 7,71
200+€ 3,59€ 7,18

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

15.9mm

Width

5.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.3mm

Детайли за продукта

N-Channel Power MOSFET 60V to 80V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more