N-Channel MOSFET, 40 A, 60 V, 8-Pin PQFN Infineon IRFH5406TRPBF
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
21 nC @ 10 V
Width
5mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.85mm
Детайли за продукта
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Производствен пакет (Ролка)
10
P.O.A.
Производствен пакет (Ролка)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
60 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.4 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6mm
Typical Gate Charge @ Vgs
21 nC @ 10 V
Width
5mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.85mm
Детайли за продукта
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products