N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF

Номер на артикул на RS: 170-2263Марка: Infineon№ по каталога на производителя: IRF7807ZTRPBF
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Series

IRF7807ZPbF

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF

4000

Предлагат се на бройка по 4000
4000P.O.A.
8000P.O.A.
12000P.O.A.
16000P.O.A.
20000P.O.A.
24000P.O.A.
28000P.O.A.
32000P.O.A.
36000P.O.A.
40000P.O.A.
44000P.O.A.
48000P.O.A.
52000P.O.A.
56000P.O.A.
60000P.O.A.

P.O.A.

N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF
Информацията за складовите наличности временно не е налична.

4000

Предлагат се на бройка по 4000
4000P.O.A.
8000P.O.A.
12000P.O.A.
16000P.O.A.
20000P.O.A.
24000P.O.A.
28000P.O.A.
32000P.O.A.
36000P.O.A.
40000P.O.A.
44000P.O.A.
48000P.O.A.
52000P.O.A.
56000P.O.A.
60000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Series

IRF7807ZPbF

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more