N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

Номер на артикул на RS: 170-2318Марка: Infineon№ по каталога на производителя: IPT012N08N5ATMA1
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Package Type

HSOF

Mounting Type

Surface Mount

Pin Count

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Width

10.58mm

Number of Elements per Chip

1

Height

2.4mm

Series

IPT012N08N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

2000

Предлагат се на бройка по 2000
2000P.O.A.
4000P.O.A.
6000P.O.A.
8000P.O.A.
10000P.O.A.
12000P.O.A.
14000P.O.A.
16000P.O.A.
18000P.O.A.
20000P.O.A.
22000P.O.A.
24000P.O.A.
26000P.O.A.
28000P.O.A.
30000P.O.A.

P.O.A.

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1
Информацията за складовите наличности временно не е налична.

2000

Предлагат се на бройка по 2000
2000P.O.A.
4000P.O.A.
6000P.O.A.
8000P.O.A.
10000P.O.A.
12000P.O.A.
14000P.O.A.
16000P.O.A.
18000P.O.A.
20000P.O.A.
22000P.O.A.
24000P.O.A.
26000P.O.A.
28000P.O.A.
30000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Package Type

HSOF

Mounting Type

Surface Mount

Pin Count

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Width

10.58mm

Number of Elements per Chip

1

Height

2.4mm

Series

IPT012N08N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more