N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 Infineon IPP075N15N3GXKSA1

Номер на артикул на RS: 170-2269Марка: Infineon№ по каталога на производителя: IPP075N15N3GXKSA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Series

IPP075N15N3 G

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Height

11.17mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 4,245

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 Infineon IPP075N15N3GXKSA1

€ 4,245

Each (In a Tube of 50) (ex VAT)

N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 Infineon IPP075N15N3GXKSA1
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична ценаPer Тръба
50 - 50€ 4,245€ 212,26
100 - 200€ 4,034€ 201,68
250+€ 3,63€ 181,51

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Series

IPP075N15N3 G

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Height

11.17mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more