N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1

Номер на артикул на RS: 215-2517Марка: Infineon№ по каталога на производителя: IPD80R900P7ATMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

800V CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 0,49

Each (On a Reel of 2500) (ex VAT)

N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1

€ 0,49

Each (On a Reel of 2500) (ex VAT)

N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

800V CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more