N-Channel MOSFET, 1.9 A, 800 V, 3-Pin DPAK Infineon IPD80R3K3P7ATMA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.3 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
Series
CoolMOS P7
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,291
Each (On a Reel of 2500) (ex VAT)
2500
€ 0,291
Each (On a Reel of 2500) (ex VAT)
2500
Купете в насипно състояние
| количество | Единична цена | Per Ролка |
|---|---|---|
| 2500 - 2500 | € 0,291 | € 728,01 |
| 5000+ | € 0,277 | € 692,93 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.3 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
Series
CoolMOS P7
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products