N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1

Номер на артикул на RS: 171-1948Марка: Infineon№ по каталога на производителя: IPD600N25N3GATMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Series

IPD600N25N3 G

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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€ 2,265

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1
Изберете тип опаковка

€ 2,265

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 10€ 2,265€ 22,65
20 - 40€ 1,857€ 18,58
50 - 90€ 1,744€ 17,44
100 - 240€ 1,631€ 16,31
250+€ 1,494€ 14,94

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Series

IPD600N25N3 G

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more