N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1

Номер на артикул на RS: 171-1945Марка: Infineon№ по каталога на производителя: IPD200N15N3GATMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Series

IPD200N15N3 G

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.57mm

Minimum Operating Temperature

-55 °C

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Информацията за складовите наличности временно не е налична.

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€ 2,277

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Изберете тип опаковка

€ 2,277

Each (In a Pack of 10) (ex VAT)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
10 - 10€ 2,277€ 22,77
20 - 40€ 1,821€ 18,21
50 - 90€ 1,708€ 17,08
100 - 240€ 1,594€ 15,94
250+€ 1,48€ 14,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Series

IPD200N15N3 G

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more